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KMID : 0381919950250030075
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Korean Journal of Microscopy
1995 Volume.25 No. 3 p.75 ~ p.81
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Microstructure Characterization of Ternary ZnSSe/GaAs Epilayer Grown by MBE
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Lee Hwack-Joo
Ryu Hyun
Park Hae-Sung
Kim Tae-Il
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Abstract
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The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.
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KEYWORD
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Cladding layer, Blue laser diode, Pseudomorphism, Stacking fault
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